unisonic technologies co., ltd ut3406 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2009 unisonic technologies co., ltd qw-r502-336.a n-channel enhancement mode field effect transistor ? description the ut3406 uses advanced trench technology to provide excellent r ds(on) , low gate charge and can be operated at low gate voltages. this device is perfect fit for use as a load switch or in pwm applications. ? features * v ds (v) = 30v * i d = 3.6a (v gs = 10v) * r ds(on) < 65m ? (v gs = 10v) * r ds(on) < 105m ? (v gs = 4.5v) * halogen free ? symbol ? ordering information pin assignment ordering number package 1 2 3 packing UT3406G-AE3-R sot-23 s g d tape reel ? marking 346g
ut3406 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-336.a ? absolute maximum ratings (ta = 25c) parameter symbol ratings unit drain-source voltage v dss 30 v gate-source voltage v gss 20 continuous drain current (ta=25c) i d 3.6 a pulsed drain current (note 2) i dm 15 a power dissipation (ta=25c) p d 1.4 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: 1. 2. absolute maximum ratings are those values beyo nd which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. pulse width limited by t j(max) ? thermal data parameter symbol min typ max unit junction to ambient ja 100 125 c/w ? electrical characteristics (t j = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0 v, i d =250 a 30 v drain-source leakage current i dss v ds =24 v,v gs =0 v 1 a gate-source leakage current i gss v gs =20 v, v ds =0 v 100 na on characteristics gate threshold voltage v gs(th) v d s = v gs , i d =250 a 1 1.9 3 v on state drain current i d(on) v gs =10 v, v ds =5 v 15 a v gs =10 v, i d =3.6 a 50 65 m ? static drain-source on-resistance r ds(on) v gs =4.5 v, i d =2.8 a 75 105 m ? dynamic parameters input capacitance c iss 288 375 pf output capacitance c oss 57 pf reverse transfer capacitance c rss v ds =15v, v gs =0 v, f=1mhz 39 pf switching parameters turn-on delay time t d(on) 4.6 ns turn-on rise time t r 1.9 ns turn-off delay time t d(off) 20.1 ns turn-off fall-time t f v gs =10v,v ds =15v, r l =2.2 ? , r gen =3 ? 2.6 ns total gate charge q g 6.5 8.5 nc gate source charge q gs 1.2 nc gate drain charge q gd v gs =10 v, v ds =15 v, i d =3.6a 1.6 nc source- drain diode ratings and characteristics drain-source diode forward voltage v sd i s =1 a 0.79 1 v maximum body-diode continuous current i s 2.5 a body diode reverse recovery time t rr 10.2 14 ns body diode reverse recovery charge q rr i f =3.6a, di/dt=100a/ s 3.5 nc note: surface mounted on 1 in 2 copper pad of fr4 board
ut3406 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-336.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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